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AMMP-6425
18-28 GHz 1W Power Amplifier in SMT Package
Data Sheet
Description
The AMMP-6425 MMIC is a broadband 1W power amplifier in a surface mount package designed for use in transmitters that operate in various frequency bands between 18GHz and 28GHz. At 25GHz, it provides 31dBm of output power (P-1dB) and 25dB of small-signal gain from a small easy-to-use device. The device has input and output matching circuitry for use in 50 environments. The AMMP-6425 also integrates a temperature compensated RF power detection circuit that enables power detection of 0.25V/W. DC bias is simple and the device operates on widely available 5V for current supply (negative voltage only needed for Vg). It is fabricated in a PHEMT process for exceptional power and gain performance.
Features
* 5x5 mm Surface Mount Package * Wide Frequency Range 18-28GHz * One watt output power * 50 match on input and output * ESD protection (60V MM, and 200V HBM)
Specifications (Vdd=5V, Idsq=650mA)
* Frequency range 18 to 28 GHz * Small signal Gain of 22dB * Output power @P-1 of 28dBm (Typ.) * Input/Output return-loss of -12dB
Pin Connections (Top View)
1 2 3
Applications
* Microwave Radio systems * Satellite VSAT, DBS Up/Down Link
Pin 1 2 3 4 5 6 7 8 Function Vgg Vdd DET_O RF_out DET_R Vdd Vgg RF_in
* LMDS & Pt-Pt mmW Long Haul * Broadband Wireless Access (including 802.16 and 802.20 WiMax) * WLL and MMDS loops * Commercial grade military
Note: 1. This MMIC uses depletion mode pHEMT devices. Negative supply is used for DC gate biasing.
8
4
7
6
5 PACKAGE BASE GND
RoHS-Exemption
Attention: Observe Precautions for handling electrostatic sensitive devices. ESD Machine Model (Class A): 60V ESD Human Body Model (Class 0): 200V Refer to Avago Application Note A004R: Electrostatic Discharge Damage and Control.
Please refer to Hazardous substances table on page 11.
Absolute Maximum Ratings [1]
Symbol Vdd Vg Idq PD Pin Tch, max Tstg Tmax Parameters [1] Positive Supply Voltage Gate Supply Voltage Drain Current Power Dissipation CW Input Power Maximum Operating Channel Temp. Storage Case Temp. Maximum Assembly Temp (20 sec max) Units V V mA W dBm C C C Value 6 -3 to 0.5 700 5.5 23 +155 -65 to +155 +260 2, 3 2 4, 5 Notes 2
Notes: 1. Operation in excess of any one of these conditions may result in permanent damage to this device. 2. Combinations of supply voltage, drain current, input power, and output power shall not exceed PD. 3. When operate at this condition with a base plate temperature of 85C, the median time to failure (MTTF) is significantly reduced. 4. These ratings apply to each individual FET 5. Junction operating temperature will directly affect the device MTTF. For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.
DC Specifications/ Physical Properties [6]
Symbol Idq Vg RJC Tch Parameters and Test Conditions Drain Supply Current (Vdd=5 V, Vg set for Idq Typical) Gate Supply Operating Voltage (Id(Q) = 650 (mA)) Thermal Resistance[6] (Channel-to-Base Plate) Channel Temperature Units mA V C/W C Value 650 -1.1 17.8 142.8
Notes: 6. Assume SnPb soldering to an evaluation RF board at 85C base plate temperatures. Worst case is at saturated output power when DC power consumption rises to 5.5W with 1.58W RF power delivered to load. Power dissipation is 3.92W and the temperature rise in the channel is 69.8 C. In this condition, the channel temperature reached at the maximum operational channel temperature of 155C. To maintain the maximum operational temperature below 155C, the base plate temperature must be maintained below 85C
AMMP-6425 RF Specifications [1, 2, 3, 4]
(Data obtained from 2.4-mm connector based test fixture, and this data is including connecter loss, and board loss.) TA= 25C, Vdd = 5.0 V, Idq =650 mA, Vg = -1.1V, Zo=50 Symbol Freq Gain P-1dB OIP3 RLin RLout Isolation Parameters and Test Conditions Operational Frequency Small-signal Gain[3, 4] Freq (GHz) = 18, 23 Freq (GHz) = 28 Freq (GHz) = 18 Freq (GHz) = 23, 28 Units GHz dB dB dBm dBm dBm dB dB dB Minimum 18 21 20 26 27 23 22 28 28 35 10 10 43 Typical Maximum 28
Output Power at 1dB[3] Gain Compression Output Third Order Intercept Point Input Return Loss Output Return Loss Reverse Isolation
Notes: 1. Small/Large -signal data measured in packaged form on a 2.4mm connecter based evaluation board at TA = 25C. 2. This final package part performance is verified by a functional test correlated to actual performance at one or more frequencies 3. Specifications are derived from measurements in a 50 test environment. Aspects of the amplifier performance may be improved over a narrower bandwidth by application of additional conjugate, linearity, or power matching. 4. Pre-assembly into package performance verified 100% on-wafer published specifications at Frequencies=18, 23, and 28GHz. 5. The Gain and P1dB tested at 18, 23 and 28 GHz guaranteed with measurement accuracy 1.5dB for Gain and P1dB, except Gain at 18 GHz with measurement accuracy 1.8dB.
2
AMMP-6425 Typical Performance
(Data obtained from 2.4-mm connector based test fixture, and this data is including connecter loss, and board loss.) (TA = 25C, Vdd=5V, Idq=650mA, Vg=-1.1 V, Zin = Zout = 50)
30 25 20 15 10 5 0 15 17 19 21 23 25 27 Frequency [GHz] 29 31 33 35 S21[dB] S12[dB]
-30
0 S11[dB] -5 S22[dB]
Return Loss [dB]
S21[dB]
S12[dB]
-10
-15
-20
-50
-25 15 17 19 21 23 25 27 Frequency [GHz] 29 31 33 35
Figure 1. Typical Gain and Reverse Isolation
Figure 2. Typical Input & Output Return Loss
35 30 25
P-1, P-3 [dBm], PAE[%] Po[dBm], and, PAE[%]
35 30 25 20 15 10 5 0 18 19 20 21 22 23 24 Frequency[GHz] 25 26 27 28 Pout PAE
1200 1000 800 600 400 200
Ids [mA]
20 15 10 5 0 P-1 PAE, @P-1 P-3 PAE, @P-3
Id
0 -200
-20
-15
-10
-5
0 Pin [dBm]
5
10
15
Figure 3. Typical P-1 and PAE
Figure 4. Typical Pout, Ids, and PAE vs. Pin at Freq=25GHz
50
10
45
Noise Figure [dB] IP3[dBm]
8
6
40
4
35
2
30 16 18 20 22 24 26 28 30 Frequency [GHz]
0 17 19 21 23 25 Frequency [GHz] 27 29 31
Figure 5. Typical IP3 (Third Order Intercept) @Pin=-20dBm
Figure 6. Typical Noise Figure
3
0.5
1
0 S22_20
0.4 Det_R - Det_O [V] Det_R - Det_O [V] 0.1 0.3
-5
S22_-40 S22_85
-10 S22[dB]
0.2
0.01
-15
0.1 0.001 0 5 10 15 Pout[dBm] 20 25 30
-20
0.0
-25
15
20
25 Frequency[GHz]
30
35
Figure 7. Typical Detector voltage vs. Output Power
0 S11_20 S11_-40 S11_85
Figure 8. Typical S22 over temperature
34 32 30 28 P-1 [dBm] 26 24
-5
S11[dB]
-10
-15
-20
22 20 15 20 25 Frequency[GHz] 30 35
P-1_85deg P-1_20deg P-1_-40deg 16 18 20 22 24 Frequency [GHz] 26 28 30
-25
Figure 9. Typical S11 over temperature
Figure 10. Typical P-1 over temperature
30
25 S21[dB]
20 S21_20 15 S21_-40 S21_85 10
15
20
25 Frequency[GHz]
30
35
Figure 11. Typical Gain over temperature
4
Typical Scattering Parameters [1]
(TA = 25C, Vdd =5 V, Idq = 650 mA, Zin = Zout = 50) Freq [GHz] 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 S11 dB -0.178 -0.523 -0.978 -1.451 -2.031 -2.704 -3.392 -4.109 -4.791 -5.516 -6.364 -7.445 -8.819 -10.363 -11.090 -12.282 -12.416 -18.133 -11.405 -12.614 -15.765 -18.729 -19.222 -16.511 -18.712 -17.947 -11.711 -10.060 -13.299 -17.064 -13.487 -11.785 -11.532 -10.906 -10.536 -10.699 -12.367 -17.928 -23.162 -11.353 -7.080 -5.965 -6.061 -6.152 -5.936 Mag 0.980 0.942 0.893 0.846 0.792 0.732 0.677 0.623 0.576 0.530 0.481 0.424 0.362 0.303 0.279 0.243 0.239 0.124 0.269 0.234 0.163 0.116 0.109 0.149 0.116 0.127 0.260 0.314 0.216 0.140 0.212 0.257 0.265 0.285 0.297 0.292 0.241 0.127 0.069 0.271 0.443 0.503 0.498 0.492 0.505 Phase -37.820 -74.503 -110.430 -145.650 178.840 143.950 109.310 75.156 41.436 8.579 -23.142 -52.655 -78.361 -98.427 -112.740 -131.170 -151.110 -159.160 -143.530 172.380 172.820 169.430 155.900 168.470 146.270 175.590 168.100 125.410 95.693 102.470 101.410 84.008 62.490 45.088 23.915 -1.693 -29.330 -55.180 34.718 26.590 -9.207 -39.140 -62.125 -76.987 -89.697 S21 dB -47.292 -44.008 -46.417 -46.503 -45.038 -47.901 -49.517 -50.018 -53.613 -56.475 -46.029 -29.971 -16.053 -3.496 8.685 18.694 22.143 25.421 24.729 25.037 25.244 25.205 24.889 23.841 23.888 24.682 24.823 22.405 19.705 16.154 12.154 8.383 4.076 0.130 -4.190 -8.418 -12.489 -16.801 -21.962 -27.653 -40.696 -36.215 -33.829 -32.808 -36.302 Mag 0.004 0.006 0.005 0.005 0.006 0.004 0.003 0.003 0.002 0.002 0.005 0.032 0.158 0.669 2.718 8.604 12.798 18.666 17.236 17.859 18.289 18.208 17.557 15.562 15.647 17.143 17.423 13.191 9.666 6.422 4.052 2.625 1.599 1.015 0.617 0.379 0.237 0.145 0.080 0.041 0.009 0.015 0.020 0.023 0.015 Phase -74.488 149.890 67.301 13.513 -58.861 -154.120 169.350 105.240 44.075 -12.575 -103.650 -152.130 149.700 81.099 -4.135 -119.950 128.380 25.746 -77.696 -153.820 120.010 41.393 -34.617 -111.460 -179.450 103.360 13.068 -74.382 -157.160 122.330 48.186 -23.332 -91.933 -158.780 136.430 74.411 15.586 -41.207 -95.210 -155.570 131.530 -26.815 -89.274 -126.740 -161.820 S12 dB -80.369 -70.925 -65.116 -62.769 -58.964 -54.809 -53.665 -51.070 -51.693 -51.331 -51.167 -51.615 -50.249 -50.263 -46.066 -46.237 -60.278 -58.209 -47.566 -45.013 -46.939 -46.250 -49.429 -47.594 -46.045 -45.724 -42.460 -41.090 -42.711 -38.921 -44.057 -46.564 -53.813 -55.014 -48.002 -40.193 -38.833 -37.437 -34.527 -36.493 -36.464 -36.100 -34.607 -33.593 -37.542 Mag 9.58E-05 2.84E-04 5.55E-04 7.27E-04 1.13E-03 1.82E-03 2.07E-03 2.80E-03 2.60E-03 2.71E-03 2.76E-03 2.63E-03 3.07E-03 3.07E-03 4.97E-03 4.88E-03 9.68E-04 1.23E-03 4.18E-03 5.61E-03 4.50E-03 4.87E-03 3.38E-03 4.17E-03 4.99E-03 5.17E-03 7.53E-03 8.82E-03 7.32E-03 1.13E-02 6.27E-03 4.70E-03 2.04E-03 1.78E-03 3.98E-03 9.78E-03 1.14E-02 1.34E-02 1.88E-02 1.50E-02 1.50E-02 1.57E-02 1.86E-02 2.09E-02 1.33E-02 Phase 103.780 15.146 -50.709 -62.503 -135.670 178.760 141.890 104.940 53.998 32.567 11.953 3.625 -15.675 -28.191 -65.232 -110.450 -136.210 -69.871 -85.440 -114.600 -153.480 -155.050 165.260 177.280 168.010 158.550 135.940 113.320 83.227 55.944 18.061 2.928 17.837 112.070 132.840 80.387 35.254 6.758 -16.672 -57.641 -63.002 -66.924 -102.970 -126.260 -154.850 S22 dB -0.085 -0.279 -0.630 -1.318 -1.389 -1.958 -2.558 -3.104 -3.633 -4.100 -4.608 -5.224 -6.438 -9.045 -14.588 -24.953 -14.586 -17.548 -9.908 -12.434 -19.545 -19.073 -19.220 -17.045 -18.114 -16.455 -11.479 -11.025 -15.117 -13.896 -11.050 -10.645 -10.575 -10.010 -9.589 -9.107 -8.758 -8.550 -8.096 -7.734 -7.456 -6.986 -6.790 -6.710 -6.733 Mag 0.990 0.968 0.930 0.859 0.852 0.798 0.745 0.700 0.658 0.624 0.588 0.548 0.477 0.353 0.186 0.057 0.187 0.133 0.320 0.239 0.105 0.111 0.109 0.141 0.124 0.150 0.267 0.281 0.175 0.202 0.280 0.294 0.296 0.316 0.332 0.350 0.365 0.374 0.394 0.410 0.424 0.447 0.458 0.462 0.461 Phase -34.276 -68.410 -102.400 -134.930 -167.440 158.670 125.480 92.207 58.406 24.394 -10.323 -45.888 -82.797 -120.890 -150.360 -82.936 -124.060 -113.800 -139.560 164.360 177.540 -162.420 176.780 -178.550 171.490 -178.830 172.720 129.980 123.360 133.650 111.830 91.607 76.604 61.871 45.962 29.444 12.764 -1.575 -17.493 -32.201 -46.161 -60.000 -74.546 -87.216 -98.984
Note: 1. Data obtained from a 2.4-mm connecter based module, and this data is including connecter loss, and board loss.
5
AMMP-6425 Application and Usage
Recommended quiescent DC bias condition for optimum power and linearity performances is Vdd=5 volts with Vg (-1.1V) set for Idq=650 mA. Minor improvements in performance are possible depending on the application. The drain bias voltage range is 3 to 5V. A single DC gate supply connected to Vgg will bias all gain stages. Muting can be accomplished by setting Vgg to the pinch-off voltage Vp. A simplified schematic for the AMMP6425 MMIC die is shown in Figure 12. The MMIC die contains ESD and over voltage protection diodes for Vg, and Vdd terminals. The package diagram for the recommended assembly is shown in Figure 13. In finalized package form, ESD diodes protect all possible ESD or over voltage damages between Vgg and ground, Vgg and Vdd, Vdd and ground. Typical ESD diode current versus diode voltage for 11connected diodes in series is shown in Figure 14. Under the recommended DC quiescent biasing condition at Vds=5V, Ids=650mA, Vgg=-1V, typical gate terminal current is approximately 0.3mA. If an active biasing technique is selected for the AMMP6425 MMIC PA DC biasing, the active biasing circuit must have more than 10-times higher internal current that the gate terminal current. An optional output power detector network is also provided. The differential voltage between the Det-Ref and Det-Out pads can be correlated with the RF power emerging from the RF output port. The detected voltage is given by :
V = (V ref - V det ) - V ofs
where Vref is the voltage at the DET_R port, Vdet is a voltage at the DET_0 port, Vofs and is the zero-inputpower offset voltage. There are three methods to calculate Vofs : 1. Vofs can be measured before each detector measurement (by removing or switching off the power source and measuring Vref - Vdet). This method gives an error due to temperature drift of less than 0.01dB/50C. 2. Vofs can be measured at a single reference temperature. The drift error will be less than 0.25dB. 3. Vofs can either be characterized over temperature and stored in a lookup table, or it can be measured at two temperatures and a linear fit used to calculate Vofs at any temperature. This method gives an error close to the method #1. The RF ports are AC coupled at the RF input to the first stage and the RF output of the final stage. No ground wired are needed since ground connections are made with plated through-holes to the backside of the device.
DET_R
Vg
V dd
DQ
DET_O
RFout
RF in
Three stage 0.5W power amplifier
Figure 12. Simplified schematic for the MMIC die
6
DET_O
1
2
3
RF Input
8 4
RF Output
7
6
5
DET_R
50 - 0 . 8V 5V
Pin 1 2 3 4 5 6 7 8
Function Vgg Vdd DET_O RF_out DET_R Vdd Vgg RF_in
1F
100 pF
100 pF 1 F
Figure 13. Typical DC connection
20 18 16 14 Diode Current [mA] 12 10 8 6 4 2 0 5 5.5 6 6.5 Voltage (V) 7 7.5 8
|Icomp(I_METER.AMP1,0)| (mA) Diode_current
Figure 14. Typical ESD diode current versus diode voltage for 11-connected diodes in series
Note: No RF performance degradation is seen due to ESD up to 200V HBM and 60V MM. The DC characteristics in general show increased leakage at lower ESD discharge voltages. The user is reminded that this device is ESD sensitive and needs to be handled with all necessary ESD protocols.
7
Recommended SMT Attachment for 5x5 Package
Figure 15a. Suggested PCB Land Pattern and Stencil Layout
Ground vias should be solder filled
Figure 15b. PCB Land Pattern and Stencil Layouts
Figure 15c. Stencil Outline Drawing(mm)
The AMMP Packaged Devices are compatible with high volume surface mount PCB assembly processes. The PCB material and mounting pattern, as defined in the data sheet, optimizes RF performance and is strongly recommended. An electronic drawing of the land pattern is available upon request from Avago Sales & Application Engineering.
8
Manual Assembly
* Follow ESD precautions while handling packages. * Handling should be along the edges with tweezers. * Recommended attachment is conductive solder paste. Please see recommended solder reflow profile. Neither Conductive epoxy or hand soldering is recommended. * Apply solder paste using a stencil printer or dot placement. The volume of solder paste will be dependent on PCB and component layout and should be controlled to ensure consistent mechanical and electrical performance. * Follow solder paste and vendor's recommendations when developing a solder reflow profile. A standard profile will have a steady ramp up from room temperature to the pre-heat temp. to avoid damage due to thermal shock. * Packages have been qualified to withstand a peak temperature of 260C for 20 seconds. Verify that the profile will not expose device beyond these limits.
300 250
Peak = 250 5C Melting point = 218C
A properly designed solder screen or stencil is required to ensure optimum amount of solder paste is deposited onto the PCB pads. The recommended stencil layout is shown in Figure 15b. The stencil has a solder paste deposition opening approximately 70% to 90% of the PCB pad. Reducing stencil opening can potentially generate more voids underneath. On the other hand, stencil openings larger than 100% will lead to excessive solder paste smear or bridging across the I/O pads. Considering the fact that solder paste thickness will directly affect the quality of the solder joint, a good choice is to use a laser cut stencil composed of 0.127mm (5 mils) thick stainless steel which is capable of producing the required fine stencil outline. The most commonly used solder reflow method is accomplished in a belt furnace using convection heat transfer. The suggested reflow profile for automated reflow processes is shown in Figure 16. This profile is designed to ensure reliable finished joints. However, the profile indicated in Figure 1 will vary among different solder pastes from different manufacturers and is shown here for reference only.
AMMP-6425 Part Number Ordering Information
Part Number AMMP-6425-BLKG AMMP-6425-TR1G Devices Per Container 10 100 500 Container Antistatic bag 7" Reel 7" Reel
Temp (C)
200 150 100 50 0 Ramp 1 0 50 Preheat Ramp 2 100 150 Seconds
Re ow 200
Cooling 250 300
AMMP-6425-TR2G
Figure 16. Suggested Lead-Free Reflow Profile for SnAgCu Solder Paste
300 Peak = 250 5C 250 Melting point = 218C 200 Temp (C) 150 100 50 0 0 Ramp 1 50 Preheat 100 Ramp 2 150 Seconds Reflow 200 Cooling 250 300
9
Package, Tape & Reel, and Ordering Information
0.114 (2.90) 0.011 (0.28) 0.018 (0.46) 1 2 3 3 2 1 * 0.014 (0.365)
.200 [5.08] 8
AMMP XXXX YWWDNN
7 6 5 .200 [5.08]
0.016 (0.40) 8
4
0.126 (3.2)
0.059 (1.5) 0.100 (2.54)
4
0.012 (0.30)
0.029 (0.75) 5 .075 [1.91] 0.016 (0.40) 0.028 (0.70) 0.100 (2.54) 0.93 (2.36) 6 7
FRONT VIEW Notes: 1. Dimensions are in inches [milimeters] 2. All grounds must be soldered to PCB RF 3. Material is rogers RO4350, 0.010" Thick
SIDE VIEW
BACK VIEW
DIMENSIONAL TOLERANCE FOR BACK VIEW: 0.002" (0.05 mm)
4.00 0.10 SEE NOTE #2 2.00 0.05 B
.011
1.55 0.05
R 0.50 TYP. 1.75 0.10 5.50 0.05 Bo Ao
Bo A Ko SECTION B-B Ao A o: B o: Ko: PITCH: WIDTH:
12.00 0.10
Top View
B
A
Side View
Dimensional Tolerances: 0.002" [0.05mm]
8.00 0.10
1.50 (MIN.)
Ko Back View
0.30 0.05 SECTION A- A
5.30 5.30 2.20 8.00 12.00
Ao MIN. NOM. MAX. 5.20 5.30 5.40
Bo 5.20 5.30 5.40
Ko 2.10 2.20 2.30
4 mm
Notes: 1. Ao and Bo measured at 0.3 Mm above base of pocket. 2. 10 Pitches cumulative tolerance is 0.2 Mm. 3. Dimensions are in millimeters (mm).
12 mm
AMMP XXXX
AMMP XXXX
AMM P XXXX
10
Names and Contents of the Toxic and Hazardous Substances or Elements in the Products
Part Name Lead (Pb) (Pb) 100pF capacitor Mercury (Hg) Hg
Toxic and Hazardous Substances or Elements Cadmium (Cd) Cd Hexavalent (Cr(VI)) Cr(VI) Polybrominated biphenyl (PBB) PBB Polybrominated diphenylether (PBDE) PBDE
: indicates that the content of the toxic and hazardous substance in all the homogeneous materials of the part is below the concentration limit requirement as described in SJ/T 11363-2006. : indicates that the content of the toxic and hazardous substance in at least one homogeneous material of the part exceeds the concentration limit requirement as described in SJ/T 11363-2006. (The enterprise may further explain the technical reasons for the "x" indicated portion in the table in accordance with the actual situations.) SJ/T 11363-2006 SJ/T 11363-2006 "x"
Note: EU RoHS compliant under exemption clause of "lead in electronic ceramic parts (e.g. piezoelectronic devices)"
For product information and a complete list of distributors, please go to our web site:
www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright (c) 2007 Avago Technologies Limited. All rights reserved. AV02-0034EN - August 20, 2007

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